In this paper we introduce an approach to increase integration rate of field-effect transistors framework of a telescopic amplifier. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized. The optimization gives a possibility to decrease dimensions of these transistors and at the same time do increase their density. The optimization gives also a possibility to increase homogeneity of distribution of dopant in the doped area and at the same time do decreases in local overheat during the functioning of considered transistors.