In this paper, we present a method to increase the density of field-effect heterotransistors within the framework of the operation of the transresistance amplifier. Within the framework of this approach, we consider the fabrication of amplifiers in heterostructures with specific configurations. Most of the heterostructure must be doped by diffusion or ion implantation. Then, the dopants and radiation defects need to be annealed within the framework of the optimization concept. We also consider a method to reduce the stress caused by mismatch in the incorporated heterostructures. We present a method to analyze mass and heat transport in heterostructures during integrated circuit fabrication to account for nonlinear stress.
