Abstract :

In this paper, we introduce an approach to increase the density of field-effect transistors framework a compact transimpedance amplifier. In the present theoretical framework, the approach we consider in the manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion (alternatively they could be doped by ion implantation). After the considered doping dopant and radiation defects should by annealed framework optimized scheme. In this study, we also consider an approach to decrease the values of mismatch-induced stress in the considered heterostructure. An analytical approach is used to analyze the mass and heat transport in heterostructure during the manufacturing of integrated circuits with account of mismatch-induced stress.