Novel Approach to Optimize the Manufacturing of p-n Heterojunctions in the Framework of a Neutral Point Clamped Multilevel Inverter to Increase their Integration Rate – on Influence Mismatch-Induced Stress
In this paper, we introduce an approach to increase the density of p-n-heterojunctions in the framework of a neutral point-clamped multilevel inverter. In the framework of the strategy, we consider manufacturing the inverter in a heterostructure with a specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed framework optimized scheme. We also consider an approach to decrease mismatch-induced stress value in the hetero-structure. We introduce an analytical approach to analyze mass and heat transport in hetero-structures while manufacturing integrated circuits with account mismatch-induced stress.
