Abstract :

We analyzed the possibility to increase density of field-effect transistors framework a single-stage differential-drive CMOS rectifier. Based on this analysis we formulate recommendations to obtain the above increasing with increasing of homogeneity of dopant distribution in doped area. We also consider a possibility to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.