Abstract :

In this paper we introduced an approach to increase integration rate of field-effect heterotransistors in the framework of a voltage controlled oscillator. We formulate recommendations for optimization of annealing to decrease dimensions of field-effect heterotransistors and to increase their density. At the same time one can decrease transition area between doped and undoped areas of elements of the considered oscillator. Also we consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time. At the same time the approach gives us possibility to take into account nonlinearity of considered processes.