In this paper we analyzed changing of charge carrier’s mobility in an implanted-junction
heterorectifier under the influence of mismatch-induced stress. We introduce a model to describe the
above changing of the mobility. Analysis of the above model leads to conditions (i) to change of the
above mobility under influence of the considered stress; (ii) to change of mismatch- induced stress by
radiation processing of materials of the considered multilayer structure. We also introduce an
analytical approach to analyze of mass transport.
