On Optimization of Manufacturing of Field-effect Transistors in the Framework of a Switch to Increase their Integration rate-On Influence Mismatch-induced Stress
In this article, we describe a method to increase the density of field-effect transistors in the framework of an absorptive single pole single-throw switch. In the framework of the approach, we consider the manufacturing of inverters in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that, the dopant and radiation defects should be annealed in the framework of the optimized scheme. We obtain dependences of the optimal value of annealing time on several parameters. We also considered a method to reduce the amount of stress mismatch in the considered heterostructure. We consider an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits with account mismatch-induced stress.
