In this paper, we introduce an approach to increase the density of field-effect transistors in the framework of a wideband current amplifier with DC-offset cancellation. In the framework an approach we consider in the manufacturing of inverter in heterostructure with specific configuration. Several required areas in the heterostructure should be doped such as diffusion or ion implantation. After that the dopant and radiation defects should by annealed in framework optimized scheme. We also consider an approach to decrease the values of mismatch-induced stress in the considered heterostructure. We also introduce an analytical approach to analyze the mass and heat transport of heterostructures during the manufacturing of integrated circuits with account mismatch-induced stress.
