In this article, we consider an approach for increasing the density of field-effect transistors, which comprised of a digitally controlled oscillator. Based on this approach, we describe manufacture of this oscillator in a heterostructure with specialized structure. Doping of some specific regions of the considered heterostructure should be done by using diffusion type of doping or by ion type of doping. After doping dopant and radiation defects will be annealed by used optimized procedure. We also will consider an approach of decreasing of mismatch-induced stress value in this heterostructure. We introduce an analytical approach for modeling of mass and heat transport in multilayer structures during manufacturing of integrated circuits taking into account mismatch-induced stress.
