In the present time, several actual problems in solid-state electronics (such as increasing the performance, reliability, and density of elements in integrated circuits such as diodes, field-effect transistors, and bipolar transistors) are being intensively solved. To increase the performance of these devices, there is an interest in the determination of materials with higher values of charge carrier mobility. One way to decrease the dimensions of elements in integrated circuits is to manufacture them in thin-film heterostructures. In this paper, we introduce an approach to increasing the density of field-effect transistors in the framework of a bootstrap switch. In the framework of the approach, we consider manufacturing the above filter in a heterostructure with a specific configuration. Several appropriate areas of the considered heterostructure should be doped by diffusion or ion implantation. After the doping, the considered dopant and radiation defects should be annealed in the framework of the recently considered optimized scheme. We also consider an approach to decreasing the value of mismatch-induced stress in the considered heterostructure. The decrease in mismatch-induced stress could be decreased by radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to analyzing mass and heat transport in heterostructures during the manufacturing of integrated circuits, taking into account spatial and temporal variations of the parameters of mass transport as well as the nonlinearity of the process.
