Abstract :

This study extensively analyzes the incorporation of third-generation semiconductors, examples of which are silicon carbide and gallium nitride, into electronic device fabrication. It evaluates their technical advantages, including enhanced performance and higher electron mobility, as well as economic benefits like lowered energy consumption and extended device lifespan. The investigation considers infrastructure readiness through collaborative efforts between academia and industry. Additionally, it identifies promising applications in power electronics, renewable energy, and high-frequency communication. Regular alignment is stressed for a conducive environment. Global case studies further validate successful wide-bandgap semiconductor integrators. Moreover, this research provides a comprehensive appraisal of the feasibility and potential benefits of leveraging wide-bandgap materials for improved electronic device manufacturing, fostering technological advancement and efficiency.