In this paper, we introduce an approach to increase density of field-effect transistors framework instrumentation amplifier input bias circuitry. Framework the approach, we consider the manufacturing of inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. Moreover, do pant and radiation defects should by annealed framework by optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
