In this paper we introduce an approach to increase integration rate of elements of a dynamic comparator. In the framework of the approach we consider a heterostructure, which consists of a substrate and an epitaxial layer with special configuration. After that we consider doping by diffusion or ion implantation of several specific areas of the epitaxial layer with annealing of them in the framework of optimized scheme. The algorithm of manufacturing of the dynamic comparator leads to decreasing of dimensions of elements of the dynamic comparator with possibility to increase their density. We also introduce an analytical approach for prognosis of technological processes with account spatial and at the same time temporal variations of parameters as well as nonlinearity of the considered processes.